P Ruterana: search on Z-Library

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1

The Atomic Structure of Threading Dislocations from Low-Angle to High-Angle Grain Boundaries in GaN/Sapphire Epitaxial Layers

V. Potin, G. Nouet, P. Ruterana, R.C. Pond

Journal:

physica status solidi (b)

Year:

1999

Language:

english

File:

PDF, 195 KB

english, 1999

2

Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures

Hasenöhrl, Stanislav, Chauhan, Prerna, Dobročka, Edmund, Stoklas, Roman, Vančo, Ľubomír, Veselý, Marián, Bouazzaoui, Farah, Chauvat, Marie-Pierre, Ruterana, Pierre, Kuzmík, Ján

Journal:

Applied Physics Express

Year:

2019

Language:

english

File:

PDF, 521 KB

english, 2019

3

AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs

Desplanque, L., El Kazzi, S., Codron, J.-L., Wang, Y., Ruterana, P., Moschetti, G., Grahn, J., Wallart, X.

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 935 KB

english, 2012

4

FE simulation of InGaN QD formation at the edge of threading dislocation in GaN

Paweł Dłużewski, Amina Belkadi, Jun Chen, Pierre Ruterana, Gerard Nouet

Journal:

physica status solidi (c)

Year:

2007

Language:

english

File:

PDF, 721 KB

english, 2007

5

Deep level transient spectroscopy and TEM analysis of defects in Eu implanted GaN

A. Colder, T. Wojtowicz, P. Marie, P. Ruterana, V. Matias, M. Mamor, A. Vantomme, S. Eimer, L. Méchin

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 988 KB

english, 2005

6

Impact of Gate-Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs

Rzin, Mehdi, Routoure, Jean-Marc, Guillet, Bruno, Mechin, Laurence, Morales, Magali, Lacam, Cedric, Gamarra, Piero, Ruterana, Pierre, Medjdoub, Farid

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 2.15 MB

english, 2017

7

Investigation of strain effects on phase diagrams in the ternary nitride alloys (InAlN, AlGaN, InGaN)

Mohamad, Ranim, Béré, Antoine, Chen, Jun, Ruterana, Pierre

Journal:

physica status solidi (a)

Year:

2017

Language:

english

File:

PDF, 1.10 MB

english, 2017

8

Molecular beam epitaxy of semipolar AlN((11ar{2}2)) and GaN((11ar{2}2)) onm-sapphire

Lise Lahourcade, Edith Bellet-Amalric, Eva Monroy, Marie Pierre Chauvat, Pierre Ruterana

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2008

Language:

english

File:

PDF, 420 KB

english, 2008

9

First-Principles Calculations of Optical Properties of AlN, GaN, and InN Compounds under Hydrostatic Pressure

B. Abbar, B. Bouhafs, H. Aourag, G. Nouet, P. Ruterana

Journal:

physica status solidi (b)

Year:

2001

Language:

english

File:

PDF, 86 KB

english, 2001

10

Initial stages of GaN buffer layer growth on (0001) sapphire by metalorganic chemical vapour deposition

Degave, F., Ruterana, P., Nouet, G., Je, J.H., Kim, C.C.

Journal:

Diamond and Related Materials

Year:

2002

Language:

english

File:

PDF, 1.05 MB

english, 2002

11

Single step hydrothermal synthesis of mixed valent V 6 O 13 nano-architectures: A case study of the possible applications in electrochemical energy conversion

Mutta, Geeta R., Popuri, Srinivasa R., Ruterana, Pierre, Buckman, Jim

Journal:

Journal of Alloys and Compounds

Year:

2017

Language:

english

File:

PDF, 1.68 MB

english, 2017

12

Nanoanalysis of stacked Cu/In/Se thin films

Lakhdar Bechiri, Nourredine Benslim, Mohamed Benabdeslem, Lamine Mahdjoubi, Jun Chen, Pierre Ruterana, Gérard Nouet

Journal:

Annales de Chimie Science des Matériaux

Year:

2002

Language:

english

File:

PDF, 437 KB

english, 2002

13

The dislocations of low-angle grain boundaries in GaN epilayers: a HRTEM quantitative study and finite element stress state calculation

Kret, S., Dluzewski, P., Maciejewski, G., Potin, V., Chen, J., Ruterana, P., Nouet, G.

Journal:

Diamond and Related Materials

Year:

2002

Language:

english

File:

PDF, 791 KB

english, 2002

14

Structure of the carrot defect in 4H-SiC epitaxial layers

Benamara, M., Zhang, X., Skowronski, M., Ruterana, P., Nouet, G., Sumakeris, J. J., Paisley, M. J., OLoughlin, M. J.

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 645 KB

english, 2005

15

Inversion domains generated at substrate steps in GaN/(0001) Al2O3 layers

Barbaray, B, Potin, V, Ruterana, P, Nouet, G

Journal:

Diamond and Related Materials

Year:

1999

Language:

english

File:

PDF, 416 KB

english, 1999

16

Evidence of one-dimensional excitons in GaAs V-shaped quantum wires

Rinaldi, R., Ferrara, M., Cingolani, R., Marti, U., Martin, D., Morier-Gemoud, F., Ruterana, P., Reinhart, F. K.

Journal:

Physical Review B

Year:

1994

Language:

english

File:

PDF, 386 KB

english, 1994

17

The electronic structure of wurtzite and zincblende AlN: an ab initio comparative study

Litimein, F, Bouhafs, B, Dridi, Z, Ruterana, P

Journal:

New Journal of Physics

Year:

2002

Language:

english

File:

PDF, 385 KB

english, 2002

18

Extracting Quantitative Information from High Resolution Electron Microscopy

S. Kret, P. Ruterana, A. Rosenauer, D. Gerthsen

Journal:

physica status solidi (b)

Year:

2001

Language:

english

File:

PDF, 5.49 MB

english, 2001

19

Reliability of Schottky Contacts on AlGaN

E. Monroy, F. Calle, T. Palacios, J. Sánchez-Osorio, M. Verdú, F.J. Sánchez, M.T. Montojo, F. Omnès, Z. Bougrioua, I. Moerman, P. Ruterana

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 93 KB

english, 2001

20

Predictive study of electronic properties of silicon–carbon alloys

A. Yakoubi, B. Bouhafs, M. Ferhat, P. Ruterana

Journal:

Materials Science and Engineering: B

Year:

2005

Language:

english

File:

PDF, 788 KB

english, 2005

21

Structural, electronic and optical properties of the wide-gap ternary alloys

H. Rozale, A. Lazreg, A. Chahed, P. Ruterana

Journal:

Superlattices and Microstructures

Year:

2009

Language:

english

File:

PDF, 718 KB

english, 2009

22

Annealing behavior of Pd/GaN (0001) microstructure

C.C. Kim, J.H. Je, D.W. Kim, H.K. Baik, S.M. Lee, Pierre Ruterana

Journal:

Materials Science and Engineering: B

Year:

2001

Language:

english

File:

PDF, 87 KB

english, 2001

23

The energy of tilt grain boundaries around 〈0001〉 in GaN

Jun Chen, P. Ruterana, G. Nouet

Journal:

physica status solidi (a)

Year:

2006

Language:

english

File:

PDF, 535 KB

english, 2006

24

Nitride Semiconductors (Handbook on Materials and Devices) || Front Matter

Ruterana, Pierre, Albrecht, Martin, Neugebauer, Jörg

Year:

2003

Language:

english

File:

PDF, 283 KB

english, 2003

25

Mosaic growth of GaN on (0001) sapphire: A high-resolution electron microscopy and crystallographic study of threading dislocations from low-angle to high-angle grain boundaries

Potin, V., Ruterana, P., Nouet, G., Pond, R. C., Morkoç, H.

Journal:

Physical Review B

Year:

2000

Language:

english

File:

PDF, 1.59 MB

english, 2000

26

Structural units and low-energy configurations of [0001] tilt grain boundaries in GaN

Chen, Jun, Ruterana, Pierre, Nouet, Gérard

Journal:

Physical Review B

Year:

2003

Language:

english

File:

PDF, 93 KB

english, 2003

27

Polarity determination of polar and semipolar (1122) InN and GaN layers by valence band photoemission spectroscopy

Skuridina, D., Dinh, D. V., Lacroix, B., Ruterana, P., Hoffmann, M., Sitar, Z., Pristovsek, M., Kneissl, M., Vogt, P.

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 1.12 MB

english, 2013

28

Catalytic role of Au in Ni/Au contact on GaN(0001)

Kim, C. C., Kim, J. K., Lee, J.-L., Je, J. H., Yi, M. S., Noh, D. Y., Hwu, Y., Ruterana, P.

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 242 KB

english, 2001

29

Structural and optical characterization of Eu-implanted GaN

Lorenz, K, Barradas, N P, Alves, E, Roqan, I S, Nogales, E, Martin, R W, O'Donnell, K P, Gloux, F, Ruterana, P

Journal:

Journal of Physics D Applied Physics

Year:

2009

Language:

english

File:

PDF, 1.06 MB

english, 2009

30

High Curie temperature for La 0.7 Sr 0.3 MnO 3 thin films deposited on CeO 2 /YSZ-based buffered silicon substrates

Perna, P, Méchin, L, Chauvat, M P, Ruterana, P, Simon, Ch, Scotti di Uccio, U

Journal:

Journal of Physics Condensed Matter

Year:

2009

Language:

english

File:

PDF, 1.07 MB

english, 2009

31

SPIE Proceedings [SPIE OPTO - San Francisco, California (Saturday 23 January 2010)] Gallium Nitride Materials and Devices V - Extended defects in semipolar (11-22) gallium nitride

Arroyo-Rojas Dasilva, Yadira, Chyi, Jen-Inn, Nanishi, Yasushi, Ruterana, Pierre, Lahourcade, Lise, Morkoç, Hadis, Litton, Cole W., Monroy, Eva, Nataf, Gilles, Piprek, Joachim, Yoon, Euijoon

Year:

2010

Language:

english

File:

PDF, 917 KB

english, 2010

32

Interface dislocations in In x Ga 1- x N/GaN heterostructures

Li, Q. T., Minj, A., Chauvat, M. P., Chen, J., Ruterana, P.

Journal:

physica status solidi (a)

Year:

2017

Language:

english

File:

PDF, 736 KB

english, 2017

33

Nitride Semiconductors (Handbook on Materials and Devices) || Surface Structure and Adatom Kinetics of Group-III Nitrides

Ruterana, Pierre, Albrecht, Martin, Neugebauer, Jörg

Year:

2003

Language:

english

File:

PDF, 426 KB

english, 2003

34

Direct One-pot Synthesis of L1 0 -FePtAg Nanoparticles with Uniform and Very Small Particle Size

Chen, X, Wang, Yi, Wang, Hanbing, Shu, Dan, Zhang, Jun, Ruterana, Pierre, Wang, Hao

Journal:

Journal of Materials Chemistry C

Year:

2017

Language:

english

File:

PDF, 1.24 MB

english, 2017

35

Influence of growth temperature on GaN:Cr incorporation and structural properties in MOVPE

Y.S. Cho, H. Hardtdegen, N. Kaluza, M. von der Ahe, U. Breuer, H.-P. Bochem, P. Ruterana, K. Schmalbuch, D. Wenzel, Th. Schäpers, B. Beschoten, D. Grützmacher, H. Lüth

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 1.15 MB

english, 2009

36

Characterisation of defects in rare earth implanted GaN by deep level transient spectroscopy

A. Colder, P. Marie, T. Wojtowicz, P. Ruterana, S. Eimer, L. Méchin, K. Lorenz, U. Wahl, E. Alves, V. Matias, M. Mamor

Journal:

Superlattices and Microstructures

Year:

2004

Language:

english

File:

PDF, 755 KB

english, 2004

37

Polarity conversion of hydride vapor phase epitaxy growing GaN via growth interruption modulation

Benliang Lei, Guanghui Yu, Haohua Ye, Sheng Meng, Xinzhong Wang, Chaotong Lin, Ming Qi, Aizhen Li, Gérard Nouet, Pierre Ruterana, Jun Chen

Journal:

Thin Solid Films

Year:

2008

Language:

english

File:

PDF, 710 KB

english, 2008

38

First-principles calculations of the structural and electronic properties of the III-nitrides-based superlattices

B. Bouhafs, A. Lakdja, P. Ruterana

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2003

Language:

english

File:

PDF, 85 KB

english, 2003

39

Interband transitions of wide-band-gap ternary pnictide BeCN2 in the chalcopyrite structure

F. Chiker, B. Abbar, B. Bouhafs, P. Ruterana

Journal:

physica status solidi (b)

Year:

2004

Language:

english

File:

PDF, 323 KB

english, 2004

40

Ga kinetics in plasma-assisted molecular-beam epitaxy of GaN(1122): Effect on the structural and optical properties

Lahourcade, L., Renard, J., Gayral, B., Monroy, E., Chauvat, M. P., Ruterana, P.

Journal:

Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 1.73 MB

english, 2008

41

Finite Element Simulation of Residual Stresses in Epitaxial Layers

Dłużewski, Paweł, Jurczak, Grzegorz, Maciejewski, Grzegorz, Kret, Sławomir, Ruterana, Piere, Nouet, Gerard

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 412 KB

2002

42

Structural Units and Energy of Grain Boundaries in GaN

Chen, Jun, Ruterana, Pierre, Nouet, Gerard

Journal:

MRS Proceedings

Year:

2003

Language:

english

File:

PDF, 404 KB

english, 2003

43

2} twins in Zn using high-resolution electron microscopy: Interfacial defects and interactions

Braisaz, T., Ruterana, P., Nouet, G., Pond, R. C.

Journal:

Philosophical Magazine A

Year:

1997

Language:

english

File:

PDF, 2.69 MB

english, 1997

44

Structural defects due to interface steps and polytypism in III-V semiconducting materials: A case study using high-resolution electron microscopy of the 2H-AlN/6H-SiC interface

Vermaut, P., Ruterana, P., Nouet, G., Morkoç, H.

Journal:

Philosophical Magazine A

Year:

1997

Language:

english

File:

PDF, 3.07 MB

english, 1997

45

Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

Naresh-Kumar, G., Vilalta-Clemente, A., Pandey, S., Skuridina, D., Behmenburg, H., Gamarra, P., Patriarche, G., Vickridge, I., di Forte-Poisson, M. A., Vogt, P., Kneissl, M., Morales, M., Ruterana, P.

Journal:

Year:

2014

Language:

english

File:

PDF, 9.58 MB

english, 2014

46

Nitride Semiconductors (Handbook on Materials and Devices) || Topological Analysis of Defects in Nitride Semiconductors

Ruterana, Pierre, Albrecht, Martin, Neugebauer, Jörg

Year:

2003

Language:

english

File:

PDF, 1.55 MB

english, 2003

47

Rare earth-doped materials for photonics

R Moncorgé, P Ruterana, J Zavada

Journal:

Materials Science and Engineering: B

Year:

2003

Language:

english

File:

PDF, 25 KB

english, 2003

48

Growth and characterisation of Eu doped GaN thin films

G. Halambalakis, N. Rousseau, O. Briot, S. Ruffenach, R.L. Aulombard, P.R. Edwards, K.P. O’Donnell, T. Wojtowicz, P. Ruterana

Journal:

Superlattices and Microstructures

Year:

2004

Language:

english

File:

PDF, 667 KB

english, 2004

49

Analysis of the nucleation of GaN layers on (0001) sapphire

F. Degave, P. Ruterana, G. Nouet, J.H. Je, C.C. Kim

Journal:

Materials Science and Engineering: B

Year:

2002

Language:

english

File:

PDF, 439 KB

english, 2002

50

Investigation of InN layers grown by molecular beam epitaxy on GaN templates

A. Vilalta-Clemente, G. R. Mutta, M. P. Chauvat, M. Morales, J. L. Doualan, P. Ruterana, J. Grandal, M. A. Sánchez-García, F. Calle, E. Valcheva, K. Kirilov

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 232 KB

english, 2010

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